| PART |
Description |
Maker |
| EPC-525-1.4 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
| EPC-1300-1.0-2 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
| EPC-880-0.9-1 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
| EPC-525-0.9-1 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
| EPC-1300-3.0-4 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
| EPC-525-0.5 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
| EPC-470-0.5 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
| KIP-205-1 |
2.5 Gbps InGaAs PIN Photodiode Chip
|
KODENSHI KOREA CORP.
|
| KOM0622045 |
8-CHIP SILICON PHOTODIODE ARRAY VERY LOW DARK CURRENT
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| KOM0622033A |
6-CHIP SILICON PHOTODIODE ARRAY LOW DARK CURRENT
|
SIEMENS AG
Siemens Semiconductor Group
|
| S8865-256G |
Photodiode array combined with signal processing circuit chip 光电二极管阵列结合信号处理集成电路芯
|
Hamamatsu Photonics K.K.
|
| S2592 |
Si photodiode Thermoelectrically cooled photodiode for low-light-level detection in UV to near IR
|
Hamamatsu Photonics
|
